Monolayer MoS2 Wafer 2-inch

FE-MoS2
Model
FE-MoS2-2i
Category
FE-MoS2

Summary

Monolayer MoS₂ possesses a direct bandgap of approximately 1.8 eV and a thickness of about 0.6 nm.

It can be utilized to fabricate transistors with ultra-short channels, as well as photodetectors and chemical sensors.

Details

——  Characterization  ——

HADDF-STEM Image Raman Spectrum

——  Specifications  ——

  FE-MoS2-Al2O3 FE-MoS2-SiO2
Wafer Size 2-inch
MoS2 Coverage > 99 %
Monolayer Percent > 99 %
Substrate Sapphire SiO2 / Si
Domain Size > 50 μm > 30 μm
Growth method CVD